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AOT2606L Dataheets PDF



Part Number AOT2606L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Datasheet AOT2606L DatasheetAOT2606L Datasheet (PDF)

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product .

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AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 72A < 6.5mΩ (< 6.2mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF2606L G D S AOB2606L G S S AOT2606L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT2606L/AOB2606L VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 C AOTF2606L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 115 57.5 72 56 ±20 54 38 260 13 10 60 180 36.5 18 2.1 1.3 -55 to 175 A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC AOT2606L/AOB2606L 15 60 1.3 AOTF2606L 15 60 4.1 Units ° C/W ° C/W ° C/W Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOT2606L/AOB2606L/AOTF2606L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS,ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TO220/TO220F VGS=10V, ID=20A TO263 VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 2.5 260 5.4 8.5 5.1 75 0.7 1 72 4050 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.3 345 16.8 0.65 53 VGS=10V, VDS=30V, ID=20A 22 17 5 18 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 20 33 4 26 125 1.0 75 31 6.5 10.5 6.2 3 Min 60 1 5 ±100 3.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current gFS VSD IS Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 7 Free Datasheet http://www.datasheet4u.com/ AOT2606L/AOB2606L/AOTF2606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 80 ID (A) 60 40 20 Vgs=4V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region .


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