AOB25S65

AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 104A 0.19Ω 26.4nC 5.8µC 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT25S65L & AOB25S65 & AOTF25S65L Top View TO-220 TO-220F TO-263 D2PAK D D G AOT25S65 D S G AOTF25S65 D S G AOB25S65 S G S C unless otherwise noted Absolute Maximum Ratings TA=25° AOT25S65/AOB25S65 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D B C AOTF25S65 650 ±30 25* 16* 104 7 96 750 AOTF25S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT25S65/AOB25S65 65 0.5 0.35 357 2.9 25 16 25* 16*...