150V N-Channel MOSFET
AOT254L/AOB254L
150V N-Channel MOSFET
General Description
The AOT254L/AOB254L uses Trench MOSFET technology that is uni...
Description
AOT254L/AOB254L
150V N-Channel MOSFET
General Description
The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 150V 32A < 46mΩ < 53mΩ
100% UIS Tested 100% Rg Tested
TO220 Top View Bottom View D D D Top View
TO-263 D2PAK
Bottom View
D
D
G G D S AOT254L S D G G S AOB254L S G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current
C
Maximum 150 ±20 32 22.5 70 4.2 3.3 12 7 125 62.5 2.1 1.3 -55 to 175
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG
A A mJ W W ° C
Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation
A
TC=100° C TA=25° C TA=70° C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 12 48 0.7
Max 15 60 1.2
Units ° C/W ° C/W ° C/W
Rev 0 : March. 20...
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