AOB210L

AOT210L/AOB210L 30V N-Channel MOSFET General Description The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D Top View TO-263 D2PAK Bottom View D D D G G D S S D G G S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 TA=25°C TA=70°C TC=25°C TC=100°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 105 82 400 20 16 68 231 176 88 1.9 1.2 -55 to 175 Units V V A A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 54 0.7 Max 15 65 0.85 Units °C/W °C/W °C/W Rev0 : Sep 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOT210L/AOB210L Electrical Characteristics (TJ=25°C unless otherwise noted...