AOT12N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω D G S C unless otherwise noted Absolute Maximum Ratings TA=25° AOT12N50/AOB12N50 Parameter Symbol Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 250 2 -55 to 150 300 AOT12N50/AOB12N50 65 0.5 0.5 12 8.4 48 5.5 454 908 5 ±30 AOTF12N50 Units V V 12* 8.4* A A mJ mJ V/ns W W/ oC ° C ° C AOTF12N50 65 -2.5 Units ° C/W ° C/W ° C/W 50 0.4 Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 www.freescale.net.cn Free Datasheet http://www.datash...