AOT11S65

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G C TC=25° Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C AOTF11S65 650 ±30 11* 8* 45 2 60 120 AOTF11S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT11S65/AOB11S65 65 0.5 0.63 198 1.6 11 8 11* 8* A A mJ mJ 31 0.25 W W/ oC V/ns ° C ° C AOTF11S65L 65 -4 Units ° C/W ° C/W ° C/W 39 0.31 100 20 -55 to 150 300 AOTF11S65 65 -3.25 RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited...