AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60
600V 11A α MOS TM Power Transistor
General Description
Product Summary
The A...
AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60
600V 11A α MOS TM Power
Transistor
General Description
Product Summary
The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
TO-220 D
Top View TO-220F(3kVAC;1s)
TO-263 D2PAK
D
700V 45A 0.399Ω 11nC 2.7µJ
D
AOT11S60L
S D G
AOTF11S60(L)
S GD
G S
G AOB11S60L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11S60L/AOB11S60L
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
11 8
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
178 1.4
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RθJA RθCS
AOT11S60L/AOB11S60L 65 0.5
Maximum Junction-to-Case
RθJC
0.7
* Drain current l...