AO6422

AO6422 20V N-Channel MOSFET General Description The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. Product Summary VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44mΩ (VGS = 4.5V) RDS(ON) < 55mΩ (VGS = 2.5V) RDS(ON) < 72mΩ (VGS = 1.8V) TSOP6 Top View Bottom View Top View D D D G Pin1 1 2 3 6 5 4 D D S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation A TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG 2.0 1.3 VGS 5 4.2 Steady State 20 ±8 3.9 3 30 1.1 0.7 Units V V A W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C -55 to 150 Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 47.5 74 54 Max 62.5 110 68 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AO6422 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 20V, VGS = 0V C TJ = 55° VDS = 0V, VGS = ±8V VDS = VGS ID = 250µA VGS = 4.5V, VDS = 5V VGS = 4.5V, ID = 5.0A RDS(ON) Static Drain-Source On-Resistance C TJ=125° VGS = 2.5V, ID = 4.5A VGS = 1.8V, ID = 3.5A gFS VSD IS F...