AO4455

NTQtu5[PgPQlSł www.whxpcb.com AO4455 30V P-Channel MOSFET General Description The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ ESD Protected 100% UIS tested 100% Rg tested (VGS = -20V) (VGS = -20V) (VGS = -10V) * RoHS and Halogen-Free Complaint SOIC-8 Top View D D D D Bottom View D G G S S S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Maximum -30 ±25 -17 -14 -182 3.1 2 -55 to 150 Units V V A Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev.1.0: July 2013 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO4455 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-20V, ID=-15A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-10V, ID=-15A VGS=-6V, ID...