AO4454

AO4454 100V N-Channel MOSFET General Description The AO4454 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 6.5A < 36mΩ < 43mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C Maximum 100 ±25 6.5 5.3 46 28 39 3.1 2 -55 to 150 Units V V A A mJ W ° C VGS TA=25° C C TA=70° ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AO4454 100V N-Channel MOSFET Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V TJ=55° C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=7V, ID=6A Forward Transconductance Diode Forward Vo...