AO3418

AO3418 30V N-Channel MOSFET General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 3.8A < 55mΩ < 65mΩ < 85mΩ SOT23 Top View Bottom View D D D S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum 30 ±12 3.8 3.1 15 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units ° C/W ° C/W ° C/W Rev 8: Jan. 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3418 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.8A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=3.8A IS=1A,VGS=0V 0...