IRFHM831PBF

IRFHM831PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 7.8 m: 7.3 nC 0.5 : 40h A PQFN 3.3mm x 3.3mm Applications Control MOSFET for Buck Converters Features and Benefits Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Switching Losses Enable Better Thermal Dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHM831TRPbF IRFHM831TR2PbF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ±20 14 11 40h 28 96 2.5 27 0.02 -55 to + 150 Units V ...