MJ802

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W MJ802 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A VBE(sat) Base-Emitter Saturation Voltage IC=7.5A; IB=0.75A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff current IC=7.5A ; VCE=2V VCB=100V; IE=0 VCB=100V; IE=0;TC=150℃ VEB=4V; IC=0 hFE DC Current Gain IC=7.5A ; VCE=2V fT Current-Gain—Bandwidth Product IC=1A;VCE=10V;f=1.0MHz MJ802 MIN TYP MAX UNIT...