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TSHF4410 Dataheets PDF



Part Number TSHF4410
Manufacturers Vishay
Logo Vishay
Description High Speed Infrared Emitting Diode
Datasheet TSHF4410 DatasheetTSHF4410 Datasheet (PDF)

TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-.

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TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHF4410 Ie (mW/sr) 40 ϕ (deg) ± 22 λP (nm) 890 tr (ns) 30 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF4410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj VALUE 5 100 200 1.5 180 100 UNIT V mA mA A mW °C Document Number: 81276 Rev. 1.1, 16-Sep-08 For technical questions, contact: [email protected] www.vishay.com 171 Free Datasheet http://www.datasheet4u.com/ TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tamb Tstg Tsd RthJA VALUE - 40 to + 85 - 40 to + 100 260 300 UNIT °C °C °C K/W 200 180 120 100 80 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 300 K/W IF - Forward Current (mA) 160 RthJA = 300 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21311 Tamb - Ambient Temperature (°C) 21312 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time C.


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