TSHF4410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity
94 8636
• Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT TSHF4410 Ie (mW/sr) 40 ϕ (deg) ± 22 λP (nm) 890 tr (ns) 30
Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSHF4410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj VALUE 5 100 200 1.5 180 100 UNIT V mA mA A mW °C
Document Number: 81276 Rev. 1.1, 16-Sep-08
For technical questions, contact:
[email protected]
www.vishay.com 171
Free Datasheet http://www.datasheet4u.com/
TSHF4410
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tamb Tstg Tsd RthJA VALUE - 40 to + 85 - 40 to + 100 260 300 UNIT °C °C °C K/W
200 180
120 100 80
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 300 K/W
IF - Forward Current (mA)
160
RthJA = 300 K/W
60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
21311
Tamb - Ambient Temperature (°C)
21312
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time C.