HFB06TB120

Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions BASE CATHODE VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr (typ.)= 116nC 4 2 IRRM(typ.) = 4.4A 3 ANODE 2 Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count 1 CATHODE trr(typ.) = 26ns di(rec)M/dt (typ.)* = 100A/µs Description International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6 amps continuous current, the HFA06TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEX...