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TSM12N65 Dataheets PDF



Part Number TSM12N65
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 650V N-Channel Power MOSFET
Datasheet TSM12N65 DatasheetTSM12N65 Datasheet (PDF)

TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A) 6 General Description The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON.

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TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A) 6 General Description The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single Pulse Avalanche Energy (Note 1) Avalanche Current (Repetitive) (Note 1) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAS EAR IAR PTOT TJ TSTG Limit 650 ±30 12 4.5 48 273 12 7.6 12 45 150 -55 to +150 Unit V V A A A mJ A mJ A W ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 2.7 62.5 Unit o o C/W C/W 1/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 6A VDS = VGS, ID = 250uA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 10V, ID = 6A Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on) Min 650 -2.0 ------------------ Typ -0.68 ---10 41 13 10.5 2162 183 14.6 30 85 140 90 ---510 4.3 Max -0.8 4.0 1 ±100 -----------12 48 1.4 --- Unit V Ω V uA nA S Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 480V, ID = 12A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time Integral reverse diode in the MOSFET IS = 12A, VGS = 0V VGS = 0V, IS =12A, VGS = 10V, ID = 12A, VDD = 300V, RG =25Ω tr td(off) tf IS ISM VSD tfr nS A A V nS uC dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=12A, L=3.5mH, RG =25Ω, Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature 2/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDS vs. Junction Temperature Drain Current vs., Case Temperature Capacitance Maximum Safe Operating Area 6/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: A10 Free Datasheet http://www.datasheet4u.com/ TSM12N65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein.


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