IS64WV1288EEBLL

IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MAY 2020 FEATURES High-speed access time: 8, 10 ns Low Active Power: 85 mW (typical) Low Standby Power: 7 mW (typical) CMOS standby Single power supply Fully static operation: no clock or refresh required Three state outputs Industrial and Automotive temperature support Lead-free available Error Detection and Error Correction DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 131,072 words by 8 bits.It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61/64WV1288EEBLL is packaged in the JEDEC standard 32-pin SOJ, TSOP-II, sTSOP-I, and 48-ball BGA (6mmx8mm). FUNCTIONAL BLOCK DIAGRAM A0-A16 Decoder Memory Array (128Kx8) ECC Array (128Kx4) 8 IO0-7 8 I/O Data Circuit 12 ECC 8 4 Column I/O /CE /OE Control /WE Circuit Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification a...