2SB772

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD882 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in the output stage of 3 watts audio amp- lifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -7 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB772 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB772 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA ; VCE= -2V hFE-2 DC Current Gain IC= -1A ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V COB Output Capacitance IE=0; VCB= -10V, ftest= 1MHz ...