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MJE13002

MCC

NPN Silicon Plastic-Encapsulate Transistor

MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !...


MCC

MJE13002

File Download Download MJE13002 Datasheet


Description
MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJE13002 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Capable of 1.25Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 600V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor  A K N Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=600Vdc, IE =0) Emitter Cutoff Current (VEB =6.0Vdc, IC=0) DC Current Gain (IC=100mAdc, V CE=10Vdc) DC Current Gain (IC=200mAdc, V CE=10Vdc) DC Current Gain (IC=10mAdc, V CE=10Vdc) Collector-Emitter Saturation Voltage (IC=200mAdc, IB =40mAdc) Base-Emitter Saturation Voltage (IC=200mAdc, IB =40mAdc) Transistor Frequency (IC=100mAdc, V CE=10Vdc, f=1.0MHz) Fall Time V CC=100V,IC=1.0A, IB1=IB2=0.2A Storage Time Min 400 600 6.0 100 100 Max Units Vdc Vdc Vdc uAdc uAdc 3 2 1 OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO D E  B M ON CHARACTERISTICS hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) G L 8.0 9.0 6.0 60 40     C 0.8 1.1 ...




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