MBR3045PT

MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Pb−Free Package is Available* SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS Mechanical Characteristics 1 3 2 4 Case: Epoxy, Molded Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 105°C) Per Device Per Diode Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Diode (See Figure 6) Storage Temperature Range Operating Junction Temperature (Note 1) Peak Surge Junction Temperature (Forward Current Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) 30 15 IFRM 30 A Max 45 Unit V 1 2 A 3 Leads are Readily Solderable MARKING DIAGRAM 4 SOT−93 CASE 340D PLASTIC AYWWG MBR3045PT IFSM 200 A A Y WW G = Assembly Location = Year = Work ...