HF150-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50S is Designed for
PACKAGE STYLE .500 4L STUD (A...
HF150-50S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF150-50S is Designed for
PACKAGE STYLE .500 4L STUD (A)
.112 x 45° A Ø .630 NOM
FEATURES:
PG = 14 dB min. at 150 W/30 MHz IMD3 = 100 dBc max. at 150 W (PEP) Omnigold™ Metalization System
B C E
C E
B E
D
G
MAXIMUM RATINGS
IC VCBO VEBO VCEO PDISS TJ T STG θ JC 10 A 110 V 4.0 V 55 V 233 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.75 OC/W
O
DIM A B C D E F G H
1/4-28 UNF-2A
F H
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62
.230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46
ORDER CODE: ASI10613
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VE = 60 V VCE = 6 V VCB = 50 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110 110 55 4.0 5 5
UNITS
V V V V mA mA --pF dB dBc %
IC = 1.4 A f = 1.0 MHz
18
43.5 220
14 VCE = 50 V ICQ =100 mA POUT = 150 W(PEP) 37 -30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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