EM513

EM513 thru EM518 ® Pb Pb Free Plating Product EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch(mm) Features Low leakage Low forward voltage drop High current capability .205(5.2) .160(4.1) 1.0(25.4)MIN. Low cost .034(.86) .028(.71) Mechanical Data Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202 .107(2.7) 1.0(25.4)MIN. .080(2.0) Absolute Maximum Ratings (Ta = 25oC) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at IF = 1.0A DC TJ = 25oC Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating and storage temperature range VRRM VRMS VDC IFAV EM 513 1600 1120 1600 EM 516 1800 1260 1800 1 30 EM 518 2000 1400 2000 Units V V V A IFSM A VF IR CJ RthA TJ ,TS 1.1 5 500 15 50 -55 to +150 V µA µA pF ℃/W ℃ Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC. 2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ EM513 thru EM518 ® FIG.2-TYPICAL FORWARD ...