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MUR3005GD Dataheets PDF



Part Number MUR3005GD
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (MUR3005 - MUR3060) 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
Datasheet MUR3005GD DatasheetMUR3005GD Datasheet (PDF)

MUR3005 thru MUR3060 ® Pb Pb Free Plating Product MUR3005 thru MUR3060 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes TO-3PN Unit: inch (mm) .604(15.35) .620(15.75) .199(5.05) .175(4.45) Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, h.

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MUR3005 thru MUR3060 ® Pb Pb Free Plating Product MUR3005 thru MUR3060 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes TO-3PN Unit: inch (mm) .604(15.35) .620(15.75) .199(5.05) .175(4.45) Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds .142(3.60) .125(3.20) .087(2.20) .070(1.80) .600(15.25) .580(14.75) .776(19.70) .819(20.80) .095(2.40) .126(3.20) .110(2.80) .050(1.25) .045(1.15) .130(3.30) .145(3.70) .798(20.25) .777(19.75) Mechanical Data Cases: TO-3PN Package Type Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 grams .030(0.75) .017(0.45) .225(5.70) .204(5.20) .225(5.70) .204(5.20) Positive Suffix "PT" Negative Suffix "PA" Doubler Suffix "GD" Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "PT" Common Anode Suffix "PA" Anode and Cathode Coexistence Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL VRRM VRMS VDC IF(AV) MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 15.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 30.0 300 210 300 400 280 400 600 420 600 IFSM 300 A VF IR Trr CJ TJ, TSTG 0.95 10 500 35 150 -55 to +150 1.3 1.5 V uA uA nS pF o 60 C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MUR3005 thru MUR3060 ® FIG.1 - FORWARD CURRENT DERATING CURVE 30 300 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 25 250 20 200 15 150 10 100 5 60 Hz Resistive or Inductive load 0 0 50 100 o 50 0 150 1 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 o INSTANTANEOUS REVERSE CURRENT, MICROAMPERES TJ=125 C 10 MUR3005-MUR3020 MUR3030-MUR3040 10 MUR3060 1.0 1 0.1 TJ=25 C o 0.1 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.01 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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