BD330

isc Silicon PNP Power Transistor BD330 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -20V(Min) ·Complement to type BD329 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD330 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.5 V VBE(on)-1 Base-Emitter On Voltage IC= -5mA; VCE= -10V -0.6 V VBE(on)-2 Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -2A; VCE= -1V VCB= -32V; IE= 0 VCB= -32V; IE= 0,TC=150℃ VEB= -5V; IC= 0 -1.2 V -0.1 -...