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ES2FA Dataheets PDF



Part Number ES2FA
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 50V - 600V Super Fast Surface Mount Rectifier
Datasheet ES2FA DatasheetES2FA Datasheet (PDF)

ES2AA – ES2JA Taiwan Semiconductor 2A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Low profile package ● Super fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARA.

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ES2AA – ES2JA Taiwan Semiconductor 2A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Low profile package ● Super fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 50 - 600 V IFSM 50 A TJ MAX 150 °C Package DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device SYMBOL ES 2AA ES 2AA ES 2BA ES 2BA ES 2CA ES 2CA ES 2DA ES 2DA ES 2FA ES 2FA Repetitive peak reverse voltage VRRM 50 100 150 200 300 Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 Forward current IF 2 Peak forward surge current, 8.3ms single half sine-wave IFSM 50 superimposed on rated load Junction temperature TJ - 55 to +150 Storage temperature TSTG - 55 to +150 ES 2GA ES 2GA 400 280 ES 2HA ES 2HA 500 350 ES 2JA ES 2JA 600 UNIT V 420 V A A °C °C 1 Version: M2102 ES2AA – ES2JA Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 20 75 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage(1) ES2AA ES2BA ES2CA ES2DA ES2FA ES2GA ES2HA ES2JA Reverse current @ rated VR(2) Junction capacitance ES2AA ES2BA ES2CA ES2DA ES2FA ES2GA ES2HA ES2JA Reverse recovery time Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms CONDITIONS IF = 2A, TJ = 25°C TJ = 25°C TJ = 125°C 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A SYMBOL VF IR CJ trr TYP 25 20 - MAX UNIT 0.95 V 1.30 V 1.70 V 10 µA 350 µA - pF - pF 35 ns ORDERING INFORMATION ORDERING CODE(1) PACKAGE ES2xA DO-214AC (SMA) Notes: 1. “x” defines voltage from 50V(ES2AA) to 600V(ES2JA) PACKING 7,500 / Tape & Reel 2 Version: M2102 ES2AA – ES2JA Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 3 AVERAGE FORWARD CURRENT (A) 2 1 0 25 50 75 100 125 150 LEAD TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 60 50 40 ES2AA - ES2DA 30 20 ES2FA - ES2JA 10 f=1.0MHz Vsig=50mVp-p 0 0.1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A) 1000 100 10 100 TJ=125.


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