Document
MUR1005 thru MUR1060
Pb
®
Pb Free Plating Product
MUR1005 thru MUR1060
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier
Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:TO-220AB Heatsink Package ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:As marked on diode body ¬ Mounting position: Any ¬ Weight: 2.24 grams
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
.038(0.96) .019(0.50)
.177(4.5)MAX
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N"
Doubler Suffix "D"
Reverse Doubler Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E"
MUR1005CT MUR1010CT MUR1020CT MUR1030CT MUR1040CT MUR1060CT
SYMBOL VRRM VRMS VDC IF(AV)
MUR1005N MUR1005D MUR1005E
MUR1010N MUR1010D MUR1010E
MUR1020N MUR1020D MUR1020E
MUR1030N MUR1030D MUR1030E
MUR1040N MUR1060N MUR1040D MUR1040E MUR1060D MUR1060E
UNIT V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 10.0
300 210 300
400 280 400
600 420 600
IFSM
100
A
VF IR Trr CJ R JC TJ, TSTG
0.98 10.0 250 35 65 2.2 -55 to +150
1.3
1.7
V uA uA nS pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
MUR1005 thru MUR1060
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10 100
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, AMPERES
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
8
80
6
60
4
40
2 60 Hz Resistive or Inductive load 0 0 50 100
o
20
0 150 1 10 100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTE.