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MURF1010D Dataheets PDF



Part Number MURF1010D
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (MURF1005 - MURF1060) 10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Datasheet MURF1010D DatasheetMURF1010D Datasheet (PDF)

MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:ITO-220AB Isolated/Insulated ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 20.

  MURF1010D   MURF1010D


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MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:ITO-220AB Isolated/Insulated ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:As marked on diode body ¬ Mounting position: Any ¬ Weight: 2.24 grams Unit : inch (mm) .189(4.8) .165(4.2) .130(3.3) .114(2.9) .112(2.85) .100(2.55) .272(6.9) .248(6.3) .606(15.4) .583(14.8) .055(1.4) .039(1.0) .035(0.9) .011(0.3) .1 (2.55) .1 (2.55) .161(4.1)MAX .543(13.8) .512(13.0) .071(1.8) .055(1.4) .114(2.9) .098(2.5) .032(.8) MAX Case Case Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N" Doubler Suffix "D" Reverse Doubler Suffix "E" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E" MURF1005CT MURF1010CT MURF1020CT MURF1030CT MURF1040CT MURF1060CT SYMBOL VRRM VRMS VDC IF(AV) MURF1005N MURF1005D MURF1005E MURF1010N MURF1010D MURF1010E MURF1020N MURF1020D MURF1020E MURF1030N MURF1030D MURF1030E MURF1040N MURF1060N MURF1040D MURF1040E MURF1060D MURF1060E UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 10.0 300 210 300 400 280 400 600 420 600 IFSM 100 A VF IR Trr CJ R JC TJ, TSTG 0.98 10.0 250 35 65 2.2 -55 to +150 1.3 1.7 V uA uA nS pF o CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MURF1005 thru MURF1060 ® FIG.1 - FORWARD CURRENT DERATING CURVE 10 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 8 80 6 60 4 40 2 60 Hz Resistive or Inductive load 0 0 50 100 o 20 0 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES MUR1005-MUR1020 10 100 TJ=125 C o MUR1030-MUR1040 1 MUR1060 10 TJ=25 C 1 o 0.1 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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