Document
SF2001G thru SF2008G
®
Pb
Pb Free Plating Product
SF2001G thru SF2008G
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
Features
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability ¬ Case: TO-220AB Heatsink ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity: As marked on body ¬ Mounting position: Any ¬ Weight: 2.24 gram approximately
.624(15.87) .50(12.7)MIN
.038(0.96) .019(0.50)
.177(4.5)MAX
Mechanical Data
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive Common Cathode
Negative Common Anode Suffix "A"
Doubler Series Connection Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Common Cathode Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2)
Operating Junction and Storage Temperature Range
o o o
SYMBOL VRRM VRMS VDC IF(AV)
SF2001G
SF2002G
SF2004G
SF2005G
SF2006G
SF2008G
SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD
UNIT V V V A
50 35 50
100 70 100
200 140 200 20.0
300 210 300
400 280 400
600 420 600
IFSM
200
175
A
VF IR Trr CJ
TJ, TSTG
0.975 10.0 250 35 120
-55 to +150
1.3
1.5
V uA uA nS
70
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
SF2001G thru SF2008G
®
FIG.1 - FORWARD CURRENT DERATING CURVE
20 200
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, AMPERES
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
16
175 150 125 100 SF2005G-SF2008G 75 50 25 0
10
SF2001G-SF2004G
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
15 SF2001G-SF2004G SF2005G-SF2007G
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
100
TJ=125 C
o
10
10 TJ=25 C 1
o
SF2008G 0.1
0.01 0.2 0.4 0.6 0.8
TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.