2SD1192

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 5.0A ·Low Saturation Voltage ·Complement to Type 2SB882 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 1.75 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1192 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1192 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC...