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2SD1118

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sa...

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