2SD1126

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 Free Datasheet http://www.datasheet4u.com/ 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg ID Ratings Unit 120 V 120 V 7 V 10 A 15 A 50 W 150 °C –55 to +150 °C 10 A Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO 120 — voltage Emitter to base breakdown V(BR)EBO 7 — voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — — — 1000 — — — — — — — — — — — — 0.8 — 8.0 Max Unit — V — V 100 µA 10 µA 2000 1.5 V 3.0 V 2.0 V 3.5 V 3.0 V — µs — µs Test conditions IC = 25 mA, RBE = ∞ IE = 200 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A*1 IC = 5 A, IB = 10 mA*1 IC = 10 A, IB = 0.1 A*1 IC = 5 A, IB = 10 mA*1 ...