2SD1138
Silicon NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition
September 2000
Application
Low frequency high voltage p...
2SD1138
Silicon
NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition
September 2000
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1138
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg
Rating 200 150 6 2 5 1.8 30 150 –45 to +150
Unit V V V A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO voltage
150
—
Emitter to base breakdown voltage
V(BR)EBO
6
—
Collector cutoff current DC current transfer ratio
Collector to emitter saturation voltage
I CBO hFE1*1 hFE2 VCE (sat)
— 60 60 —
— — — —
Base to emitter voltage
VBE — —
Collector output capacitance Cob — 20
Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test.
Max Unit —V
—V
1 µA 320 — 3.0 V
1.0 V — pF
Test conditions IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2
VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz
B 60 to 120
CD 100 to 200 160 to 320
Collector current IC (A)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve 40
30
...