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2SD1137

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Silicon NPN Transistor

2SD1137 Silicon NPN Triple Diffused ADE-208-907 (Z) 1st. Edition September 2000 Application Low frequency power amplifie...


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2SD1137

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2SD1137 Silicon NPN Triple Diffused ADE-208-907 (Z) 1st. Edition September 2000 Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Rating Unit 100 V 100 V 4 V 4 A 5 A 1.8 W 40 W 150 °C –45 to +150 °C Free Datasheet http://www.datasheet4u.com/ 2SD1137 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO 100 — voltage Emitter to base breakdown V(BR)EBO 4 — voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CEO — — I EBO — — hFE 50 — 25 — Collector to emitter saturation VCE (sat) — — voltage Note: 1. Pulse test. Max Unit — V — V 100 µA 50 µA 250 350 1.0 V Test conditions IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V IC = 0.5 A*1 IC = 50 mA IC = 1 A, IB = 0.1 A Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 10 (10 V, 4 A) 3 1.0 DC Operation TC =...




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