2SD1133

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB ADE-208-905 (Z) 1st. Edition September 2000 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 2SD1133 2SD1134 Unit 70 70 V 50 60 V 5 5 V 4 4 A 8 8 A 40 40 W 150 150 °C –45 to +150 –45 to +150 °C Free Datasheet http://www.datasheet4u.com/ 2SD1133, 2SD1134 Electrical Characteristics (Ta = 25°C) 2SD1133 2SD1134 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 70 — — 70 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — 60 — — V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 ——5 ——V IE = 10 µA, IC = 0 Collector cutoff current ICBO — —1 — —1 µA VCB = 50 V, IE = 0 DC current transfer ratio hFE1*1 60 — 320 60 — 320 VCE = 4V IC = 1 A*2 hFE2 35 — — 35 — — IC = 0.1 A*2 Collector to emitter saturation voltage VCE(sat) — — 1 — —1 V IC = 2 A, IB = 0.2 A*2 Base to emitter voltage VBE — —1 — —1 Gain bandwidth product fT — 7 —— 7 — Notes: 1. The 2SD1133 ...