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2SD1164-Z

Renesas
Part Number 2SD1164-Z
Manufacturer Renesas
Description SILICON POWER TRANSISTOR
Published Dec 26, 2013
Detailed Description Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR DESCRIPTION R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD11...
Datasheet PDF File 2SD1164-Z PDF File

2SD1164-Z
2SD1164-Z

Overview
Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR DESCRIPTION R07DS0254EJ0400 Rev.
4.
00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES • High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.
0 2 4 2.
0 150 −55 to +150 UNIT V V V A A W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature PT Tj Tstg Notes 1.
PW ≤ 10 ms, Duty Cycle ≤ 50% 2...


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