NTTFS4928N

NTTFS4928N MOSFET – Power, Single, N-Channel, m8FL 30 V, 37 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters Power Load Switch Notebook Battery Management Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 11.8 A TA = 85°C 8.5 TA = 25°C PD 2.12 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.9 A TA = 85°C 11.5 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD ID PD ID PD IDM TJ, Tstg IS dV/dt 3.86 W 7.3 A 5.2 0.81 W 37 A 27 20.8 W 160 A −55 to °C +150 20 A 6.0 V/ns http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 9.0 mW @ 10 V 13.5 mW @ 4.5 V ID MAX 37 A N−Channel MOSFET D (5−8) G (4) 1 WDFN8 (m8FL) CASE 511AB S (1,2,3) MARKING DIAGRAM 1 S D S 4928 D...