NTTFS4840N

NTTFS4840N Power MOSFET Features 30 V, 26 A, Single N−Channel, m8FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DC−DC Converters Point of Load Power Load Switch Notebook Battery Management Motor Control Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Current Limited by Pkg. Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 7.3 5.3 2.2 10.3 7.5 4.4 4.6 3.3 0.84 26 19 27.8 77 20 −55 to +150 23 6.0 16.7 W A A °C A V/ns mJ W A W A 4840 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package W A 1 http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 24 mW @ 10 V 36 mW @ 4.5 V N−Channel MOSFET D (5−8) ID MAX 26 A Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Unit V V A G (4) S (1,2,3) MARKING DIAGRAM WDFN8 (m8FL) CASE 511AB 1 S S S G 4...