Document
S i 8 2 2 0/21
0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T (2.5, 3.75, AND 5.0 KV RMS)
Features
Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers 50 ns propagation delay (independent of input drive current) 14x tighter part-to-part matching versus opto-drivers 2.5, 3.75, and 5.0 kVRMS isolation
Transient Immunity 30 kV/µs
Under-voltage lockout protection with hysteresis Resistant to temperature and aging effects Gate driver supply voltage: 6.5 V to 24 V Operating temperature range: –40 to +125 °C Cost-effective Narrow body SOIC-8 and Wide body SOIC-16 packages RoHS Compliant
Pin Assignments: See page 19
Narrow Body SOIC NC 8 VDD 1 ANODE 2 7 VO CATHODE 6 VO 3 NC 4 5 VSS
Top View
Wide Body SOIC
CATHODE NC
Applications
IGBT/ MOSFET gate drives Industrial control systems Switch mode power supplies
UPS systems Motor control drives Inverters
NC ANODE NC NC CATHODE
Safety Regulatory Approvals
UL 1577 recognized Up to 5000 VRMS for 1 minute CSA component notice 5A approval IEC 60950, 61010, 60601 approved
VDE certification conformity IEC 60747-5-2 (VDE0884 Part 2)
NC
1 2 3 4 5 6 7 8
Top View
16 15 14 13 12 11 10 9
VSS VDD NC VO NC NC NC VSS
Patent pending
Description
The Si8220/21 is a high-performance, functional upgrade for optocoupled drivers, such as the HCPL-3120 and the HPCL-0302 providing 2.5 A of peak output current. It utilizes Silicon Laboratories' proprietary silicon isolation technology, which provides a choice of 2.5, 3.75, or 5.0 kVRMS withstand voltages per UL1577. This technology enables higher performance, reduced variation with temperature and age, tighter part-topart matching, and superior common-mode rejection compared to optoisolated drivers. While the input circuit mimics the characteristics of an LED, less drive current is required, resulting in increased efficiency. Propagation delay time is independent of input drive current, resulting in consistently short propagation time, tighter unit-to-unit variation, and greater input circuit design flexibility.
Rev. 0.22 4/10
Copyright © 2010 by Silicon Laboratories
Si8220/21
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Free Datasheet http://www.datasheet4u.com/
Si8220/21
Functional Block Diagram
NC
ISOLATOR Semiconductor-Based Isolation Barrier
LED Emulator
VDD
ANODE
RF Transmitter
VO
RF Receiver UV Lockout
CATHODE
VO
VSS NC
Si8220/21
2
Rev. 0.22
Free Datasheet http://www.datasheet4u.com/
Si8220/21 TABLE O F C ONTENTS
Section Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 3. Regulatory Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5. Technical Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 5.1. Device Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 5.2. Device Startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 5.3. Under Voltage Lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6. Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.1. Power Supply Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2. Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.3. Power Dissipation Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6.4. Input Circuit Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.5. Parametric Differences between Si8220/21 and HCPL-0302 and HCPL-3120 Opto Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.6. RF Radiated Emissions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.7. RF, Magnetic, and Common Mode Transient Immunity . . . . . . . . . . . . . . . . . . . . . . 18 7. Pin Descriptions (Narrow-Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8. Pin Descriptions (Wide-Body SOIC) . . ..