SI4128DY

New Product Si4128DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 10.9 3.8 nC 9.7 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS Notebook PC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G - System Power - Load Switch D Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free) Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 10.9 8.7 7.5b, c 6b, c 30 4.2 2b, c 5 3.2 2.4b, c 1.5b, c - 55 to 150 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 42 19 Maximum 53 25 Unit °C/W Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69004 S-83089-Rev. C, 29-Dec-08 www.vishay.com 1 Free Datasheet http://www.datasheet4u.com/ New Product Si412...