DMS935E2

This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits  Features  Two elements incorporated into one package (Tr + CCD load device)  High transition frequency fT  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SSMini6-F3-B  Pin Name 1: Emitter 2: Base 3: Gate  Basic Part Number DSC2G03 + CCD load device (Individual) 4: Source 5: Drain 6: Collector  Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  Marking Symbol: X1  Internal Connection Unit V V V mA V mA mW °C °C (C) 6 (D) 5 (S) 4  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current CCD Limiting element voltage load device Limiting element current Total power dissipation * Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Vmax Imax PT Tj Tstg Rating 30 20 3 50 40 10 125 150 –55 to +150 Tr FET 1 (E) 2 (B) 3 (G) Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Symbol VCBO VEBO VBE hFE fT Conditions IC ...