STF8220

S T F 8220 S amHop Microelectronics C orp. Oct.23 2006 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) 20 28 S uper high dense cell design for low R DS (ON ). @ V G S = 4.0V @ V G S = 2.5V S2 S2 S2 G2 R ugged and reliable. S urface Mount P ackage. E S D P rotected. Bottom Drain Contact S1 S1 S1 4 Q1 5 6 7 Q2 Bottom Drain Contact S2 S2 S2 G2 P IN 1 S1 S1 S1 G1 D1/D2 3 2 1 DF N 2X3 (B ottom view) G1 8 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 7 30 1.7 1.56 -55 to 150 Unit V V A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 80 C /W 1 Free Datasheet http://www.datasheet4u.com/ S T F 8220 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 7A V GS =2.5V, ID = 4A V DS = 5V, ID =4A Min Typ C Max Unit 20 1 10 0.5 ...