TVS Diode Array
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG24FAS23
TVS Diode Array for ESD Protect...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG24FAS23
TVS Diode Array for ESD Protection in Portable Electronics
FEATURES
350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to
A G
L
E B
L
DIM A
D
B C D E G H J K P P L M N P
MILLIMETERS _ 0.20 2.93 +
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 8A(tp=8/20 s) Standard SOT-23 Package. Protects one Bidirectional line or two Unidirectional Lines. Low clamping voltage. Low leakage current.
2
3
H
1
C
N
M
1. CATHODE 1
APPLICATIONS
Cell phone handsets and accessories. Microprocessor based equipment. Industrial Controls. Personal digital assistants (PDA’s) Notebooks, desktops PC, & servers. Portable instrumentation. Set-Top Box, DVD Player.
2. CATHODE 2 3. ANODE
K
SOT-23
MAXIMUM RATING (Ta=25
CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature
)
SYMBOL PPK IPP Tj Tstg RATING 350 8 -55 150 -55 150 UNIT W A
Marking
3
J
Lot No.
Type Name
24F
2 1
3
2
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance
)
TEST CONDITION It=1mA VRWM=24V IPP=8A, tp=8/20 s VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 MIN. 2...
Similar Datasheet