TVS Diode Array
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG12FXUS6
TVS Diode Array for ESD Protect...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG12FXUS6
TVS Diode Array for ESD Protection in Portable Electronics
FEATURES
100 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to
A1 A
1
B B1 6 5 4 D
C
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact). IEC 61000-4-4(EFT) 40A (tp=5/50 ) IEC 61000-4-5(Lightning) 4.2A (tp=8/20 s) Protects five I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in portable electronics.
2 3
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
H
C
T G
T
APPLICATIONS
Cell phone handsets and accessories. Cordless phones. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Set-Top Box, DVD Player. Digital Camera.
1. 2. 3. 4. 5. 6.
D1 COMMON ANODE D2 D3 D4 D5
US6
Marking
6 5 4
MAXIMUM RATING (Ta=25
CHARACTERISTIC Peak Pulse Power (tp=8/20¥ì s) Peak Pulse Current (tp=8/20¥ì s) Operating Temperature Storage Temperature
)
SYMBOL PPK IPP Tj Tstg RATING 100 4.2 -55¡- 150 ¡É
1 2
6
D5 D4
Lot No.
UNIT W A
3
4
D3
Type Name
2X
5
-55¡- 150 ¡É
D1
D2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25¡É
CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance
)
TEST CONDITION It=1mA VRWM=12V IPP=4.2A, tp=8/20¥ì s VR=0V, f=1MHz Between I/O Pins and GND MIN. 13.3 TYP. M...
Similar Datasheet