PG12FBUSC

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. B PG12FBUSC Single Line TVS Diode for ESD Protection in Portable Electronics G FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects on I/O or power line. Low clamping voltage. Low leakage current. M E A H 2 D J C I DIM A B C M D E F G H I J K MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6 1. ANODE 2. ANODE APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. L M USC Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20¥ì s) Peak Pulse Current (tp=8/20¥ì s) Operating Temperature Storage Temperature ) SYMBOL PPK IPP Tj Tstg RATING 350 15 -55¡- 150 ¡É ¡É -55¡- 150 UNIT W A 2 1 2F Type Name 2 1 ELECTRICAL CHARACTERISTICS (Ta=25¡É CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance ) TEST CONDITION It=1mA VRWM=12V ...