BSZ033N03LSCG

BSZ033N03LSC G OptiMOS™3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Improved switching behaviour Qualified according to JEDEC1) for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Halogen-free according to IEC61249-2-21 Type BSZ033N03LSC G Package PG-TSDSON-8 Marking 033N03L Product Summary V DS R DS(on),max ID 30 3.3 50 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 50 50 50 50 Unit A 20 200 20 150 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev. 1.2 page 1 2009-11-05 Free Datasheet http://www.datasheet4u.com/ BSZ033N03LSC G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 69 2.1 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, juncti...