Document
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
VDSS ID25
RDS(on)
= 600V = 30A ≤ 240mΩ
TO-247
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540 -55 to +150 +150 -55 to +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source
G S G D S
(TAB)
TO-3P
(TAB)
TO-268
1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247&TO-3P) TO-247 TO-3P TO-268
300 260 1.13/10 6.0 5.5 4.0
(TAB)
D = Drain TAB = Drain
Features
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max. 600 2.5 4.5 ±100 50 300 V V nA μA μA
z z
z
Designed for linear operation International standard packages Avalanche rated Molding epoxies meet UL 94 V-0 flammability classification Guaranteed FBSOA at 75°C
Applications
z z z z z
240 mΩ
Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators
© 2009 IXYS CORPORATION, All rights reserved
DS100101(01/09)
Free Datasheet http://www.datasheet4u.com/
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247&TO-3P) 0.25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 10 14 10.7 600 130 43 65 123 43 335 58 212 18 S nF pF pF ns ns ns ns nC nC nC 0.23 °C/W °C/W
e
1 2 3
TO-247 (IXTH) Outline
∅P
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Safe Operating Area Specification Symbol SOA Test Conditions VDS = 480V, ID = 0.6A, TC = 75°C, tp = 3s Min. 288 Typ. Max. W
Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0V
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 120 1.5 710 A A V ns
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = IS, -di/dt = 100A/μs, VR = 100V
TO-3P (IXTQ) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-268 (IXTT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
Free Datasheet http://www.datasheet4u.com/
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
Fig. 1. Output Characteristics @ 25ºC
30 27 24 21 VGS = 20V 14V 12V 10V 9V 80 70 60 VGS = 20V 14V 12V 10V
Fig. 2. Extended Output Characteristics @ 25ºC
ID - Amperes
ID - Amperes
8V
18 15 12 9 7V
50 9V 40 30 20 8V
6 3
6V 10 5V
7V
6V 0 6 0 5 10 15 20 25 30
0 0 1 2 3 4 5
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125ºC
30 27 24 21 VGS = 20V 12V 10V 9V 8V 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 30A I D = 15A
ID - Amperes
18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 5V 6V 7V
0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current
3.0 2.8 2.6 VGS = 10V TJ = 125ºC 30 25 35
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.4
ID - Amperes
TJ = 25ºC 0 10 20 30 40 50 60 70 80
2.2 2.0 1.8 1.6 1.4 1.2
20 15 10 5
1.0 0.8 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
.