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IXTQ30N60L2 Dataheets PDF



Part Number IXTQ30N60L2
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTQ30N60L2 DatasheetIXTQ30N60L2 Datasheet (PDF)

Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540.

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Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540 -55 to +150 +150 -55 to +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source G S G D S (TAB) TO-3P (TAB) TO-268 1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247&TO-3P) TO-247 TO-3P TO-268 300 260 1.13/10 6.0 5.5 4.0 (TAB) D = Drain TAB = Drain Features z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 2.5 4.5 ±100 50 300 V V nA μA μA z z z Designed for linear operation International standard packages Avalanche rated Molding epoxies meet UL 94 V-0 flammability classification Guaranteed FBSOA at 75°C Applications z z z z z 240 mΩ Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators © 2009 IXYS CORPORATION, All rights reserved DS100101(01/09) Free Datasheet http://www.datasheet4u.com/ IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247&TO-3P) 0.25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 10 14 10.7 600 130 43 65 123 43 335 58 212 18 S nF pF pF ns ns ns ns nC nC nC 0.23 °C/W °C/W e 1 2 3 TO-247 (IXTH) Outline ∅P Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Safe Operating Area Specification Symbol SOA Test Conditions VDS = 480V, ID = 0.6A, TC = 75°C, tp = 3s Min. 288 Typ. Max. W Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 120 1.5 710 A A V ns Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = IS, -di/dt = 100A/μs, VR = 100V TO-3P (IXTQ) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-268 (IXTT) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Free Datasheet http://www.datasheet4u.com/ IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Fig. 1. Output Characteristics @ 25ºC 30 27 24 21 VGS = 20V 14V 12V 10V 9V 80 70 60 VGS = 20V 14V 12V 10V Fig. 2. Extended Output Characteristics @ 25ºC ID - Amperes ID - Amperes 8V 18 15 12 9 7V 50 9V 40 30 20 8V 6 3 6V 10 5V 7V 6V 0 6 0 5 10 15 20 25 30 0 0 1 2 3 4 5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC 30 27 24 21 VGS = 20V 12V 10V 9V 8V 2.8 2.6 2.4 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 30A I D = 15A ID - Amperes 18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 5V 6V 7V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current 3.0 2.8 2.6 VGS = 10V TJ = 125ºC 30 25 35 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 2.4 ID - Amperes TJ = 25ºC 0 10 20 30 40 50 60 70 80 2.2 2.0 1.8 1.6 1.4 1.2 20 15 10 5 1.0 0.8 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes .


IXTT30N60L2 IXTQ30N60L2 IXTH30N60L2


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