IXTH16P60P

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 600 - 600 ±20 ±30 - 16 - 48 - 16 2.5 10 460 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g Features: z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247) 300 260 1.13 / 10 5 6 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to protect Applications: z z z z z High side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V VGS = -10V, ID = 0.5 ID25, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. - 600 - 2.5 - 4.5 V V Advantages: z z z z ±100 nA - 25 μA - 200 μ A 720 mΩ Low gate charge results in simple drive requirement High pow...