IXTP76N25T

TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 250 V 250 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 76 A 170 A TC = 25C TC = 25C 8 A 1.5 J TC = 25C 460 W -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13/10 N/lb Nm/lb.in TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS = 0V, ID = 10mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 250 V 300 V 3.0 5.0 V  100 nA 2 A 200 μA 44 m G D S TO-247(IXTH) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Avalanche Rated  High Current Handling Capability  Fast Intrinsic Rectifier  Low RDS(on) Advantages  Easy to Mount  Space Savings  High Power Den...