DZ2J150

DZ2J150 Silicon epitaxial planar type For constant voltage / For surge absorption circuit  Features  Excellent rising characteristics of zener current Iz  Low zener operating resistance RZ  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: UJ, UU  Packaging DZ2J150×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak forward current Total power dissipation *1 Electrostatic discharge *2 Junction temperature Storage temperature Symbol IFRM PT ESD Tj Tstg Rating 200 200 ±8 150 –55 to +150 Unit mA mW kV °C °C 1: Cathode 2: Anode Panasonic JEITA Code SMini2-F5-B SC-90A  Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) Solder in (Recommended land pattern) *2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)  Common Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Zener voltage *1, 2, 4 Zener operating resistance Zener rise operating resistance Reverse current Temperature coefficient of zener voltage *3 Symbol VF VZ RZ RZK IR SZ IF = 10 mA IZ = 5 mA IZ = 5 mA IZ = 0.5 mA VR = 11 V IZ = 5 mA 13.4 14.25 Conditions Min Typ Max 1.0 15.60 40 80 0.05 Unit V V W W µA mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 5 MHz. 3. *1: The temperature must be controlled 25°...