DSEP15-12CR

DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 1200 VRRM V 1200 DSEP 15-12CR Type A C IFAV = 15 A VRRM = 1200 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 130°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.0 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 tbd 110 0.1 0.1 -55...+175 175 -55...+150 A A A A mJ A °C °C °C W V~ N g q q q q Features q TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 150 2500 20...120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 2.67 4.04 1 0.25 20 4.0 4.9 µA mA V V K/W K/W ns A q q q VF y RthJC RthCH trr IRM q q q q with heatsink compound IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ...